CuBiSeO is an experimental quaternary semiconductor compound combining copper, bismuth, selenium, and oxygen elements. This material belongs to the class of mixed-valence oxide semiconductors being investigated for optoelectronic and photovoltaic applications, where the layered bismuth-chalcogenide framework offers tunable bandgaps and potential for efficient charge transport. Research interest in CuBiSeO-family compounds centers on next-generation solar cells, photodetectors, and thermoelectric devices where the combination of earth-abundant elements and structural flexibility provides advantages over conventional III-V semiconductors or lead-based perovskites.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,935.2 | ksi | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 4,729.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3107 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.8200 | eV | — | ||
| ↳ | 0.3740 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 38.11 range 15.04–61.18median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -135.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7348 | eV/atom | — |