CuBiSeO is an experimental quaternary semiconductor compound combining copper, bismuth, selenium, and oxygen elements. This material belongs to the class of mixed-valence oxide semiconductors being investigated for optoelectronic and photovoltaic applications, where the layered bismuth-chalcogenide framework offers tunable bandgaps and potential for efficient charge transport. Research interest in CuBiSeO-family compounds centers on next-generation solar cells, photodetectors, and thermoelectric devices where the combination of earth-abundant elements and structural flexibility provides advantages over conventional III-V semiconductors or lead-based perovskites.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 82.29 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3300 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 32.61 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 8.599 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.3740 | eV | DFT · OptB88vdW | ||
| ↳ | 0.8200 | eV | Measured | ||
Dielectric Constant (Relative Permittivity)(εr) | 38.11 range 15.04–61.18median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 15.33 | - | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 0.07667 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.09000 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00137 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00273 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -135.5 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 358.1 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.7348 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data