CuAsSe is a ternary compound combining copper, arsenic, and selenium—a material belonging to the family of chalcogenide semiconductors and intermetallic phases. This composition is primarily studied in research contexts for its potential in optoelectronic and photovoltaic applications, where the combination of elements offers tunable band gap properties and potential for thin-film device architectures. The material represents an experimental system rather than an established industrial workhorse; engineers would consider it for advanced research programs in semiconductor devices, thermoelectric conversion, or infrared optics where conventional binary semiconductors are insufficient.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1962 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02390 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1338 | eV/atom | — |