CuAgGeSe₃ is a quaternary semiconductor compound combining copper, silver, germanium, and selenium elements. This material belongs to the family of complex chalcogenides and is primarily of research and development interest rather than established in high-volume industrial production. The compound is investigated for its potential in thermoelectric applications, photovoltaic devices, and solid-state electronics where the combination of elements can produce favorable band structure and charge carrier properties compared to simpler binary or ternary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.520 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06400 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 24.34 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00820 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1901 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data