Cu₆P₂S₈ is a mixed-metal phosphide-sulfide semiconductor compound combining copper with phosphorus and sulfur elements. This material belongs to the family of metal chalcogenides and is primarily of research interest for photovoltaic and thermoelectric applications, where its layered crystal structure and band gap properties offer potential advantages in energy conversion devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,538.6 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 5,086.9 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.075 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3250 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data