Cu4 Si2 Ni1 S7

semiconductor

· Cu4 Si2 Ni1 S7

Cu₄Si₂Ni₁S₇ is a quaternary sulfide semiconductor compound combining copper, silicon, nickel, and sulfur. This material belongs to the family of transition metal sulfides and represents a research-phase composition; such mixed-metal sulfides are investigated for potential optoelectronic and energy storage applications where the combination of metallic and semiconducting elements can create tunable band gaps and enhanced charge-carrier dynamics. The specific stoichiometry suggests exploration in photovoltaic absorber layers, thermoelectric devices, or electrochemical energy conversion systems where heteroatomic sulfide phases offer advantages in cost and earth-abundance compared to traditional III-V semiconductors.

Photovoltaic absorber materialsThermoelectric devicesElectrochemical energy storageResearch-phase semiconductorsEarth-abundant solar materialsTransition metal sulfide compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04660	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4840	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cu4 Si2 Ni1 S7

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control