Cu₄O₂ is a copper oxide semiconductor compound that represents a mixed-valence copper-oxygen system within the broader family of cuprous and cupric oxides. This material is primarily of research and development interest rather than established industrial production, as it explores intermediate oxidation states between Cu₂O and CuO for potential semiconductor applications. Cu₄O₂ is investigated for photovoltaic devices, photocatalysis, and optoelectronic components where its semiconducting properties and copper-based composition offer potential advantages over conventional oxides, though commercial adoption remains limited compared to more established copper oxide phases.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 115.2 | GPa | — | ||
Shear Modulus(G) | 8.500 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1349 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5240 | eV/atom | — |