Cu4O2F4 is a mixed-valence copper oxide fluoride compound that belongs to the class of copper-based semiconductors with potential ionic and electronic transport properties. This is primarily a research-phase material studied for its unique crystal structure combining oxide and fluoride anions, with potential applications in solid-state ionics, catalysis, and electronic devices where copper's multiple oxidation states can be leveraged. The material represents an emerging area in inorganic semiconductor chemistry where fluorine doping or incorporation into copper oxides is explored to modify band structure and ion mobility compared to unfluorinated copper oxide analogues.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00260 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.157 | eV/atom | — |