Cu4 In1 Tb1

semiconductor

· Cu4 In1 Tb1

Cu4In1Tb1 is a rare-earth doped copper-indium intermetallic compound belonging to the family of semiconductors and functional materials that combine transition metals with rare-earth elements. This is a research-stage material rather than a commercial alloy; compounds in this family are investigated primarily for optoelectronic and magnetic properties that arise from the terbium dopant, making them candidates for advanced device applications where conventional semiconductors fall short.

optoelectronic researchrare-earth doped semiconductorsmagnetic device developmentexperimental thin filmsphotonic materials researchmaterials science prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.08910	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2860	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cu4 In1 Tb1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control