Cu4As5U2 is an experimental ternary compound semiconductor combining copper, arsenic, and uranium elements. This material belongs to the family of complex semiconductor systems being explored in nuclear materials research and solid-state physics, where uranium-bearing compounds offer unique electronic and potential nuclear properties not found in conventional semiconductors. Applications remain largely in the research domain, focused on understanding semiconductor behavior in actinide systems and potential next-generation nuclear fuel or radiation-detection materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000200 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3480 | eV/atom | — |