Cu3GeSe4 is a quaternary chalcogenide compound composed of copper, germanium, and selenium. This material belongs to the family of semiconducting chalcogenides and is primarily investigated in research contexts for its potential thermoelectric and optoelectronic properties. The compound is of scientific interest because of its tunable bandgap and layered crystal structure, making it a candidate for next-generation photovoltaic devices, thermoelectric generators, and related energy conversion applications where semiconductors with mixed-metal compositions offer advantages over binary or ternary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,621 | ksi | — | ||
Shear Modulus(G) | -2,174.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2002 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2493 | eV/atom | — |