Cu3 Te2 Br2 O6

semiconductor

· Cu3 Te2 Br2 O6

Cu3Te2Br2O6 is a mixed-valence copper tellurium halide oxide semiconductor, combining copper, tellurium, bromine, and oxygen in a layered or framework structure. This is a research-phase compound rather than an established industrial material, belonging to the family of complex metal halide oxides that show promise for photovoltaic, optoelectronic, and solid-state device applications due to tunable bandgaps and potential ferroelectric or magnetic properties. Engineers would consider it primarily in exploratory R&D contexts where novel semiconductor architectures, low-dimensional charge transport, or hybrid light-matter interactions are being investigated—not as a drop-in replacement for conventional semiconductors.

experimental photovoltaicsoptoelectronic research devicessolid-state physics prototypingbandgap engineering studieshalide semiconductor developmentfunctional materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02760	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7810	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cu3 Te2 Br2 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control