Cu3 Mn3 O8
semiconductorCu₃Mn₃O₈ is a mixed-valence copper-manganese oxide ceramic compound belonging to the family of transition metal oxides, which exhibit semiconducting behavior through electron hopping between mixed oxidation states. This material is primarily of research interest for energy storage and catalytic applications, where the abundance of both copper and manganese, combined with their variable oxidation states, make it a candidate for low-cost alternatives to precious-metal catalysts and for electrochemical devices. Its semiconducting properties and structural flexibility position it within the broader exploration of spinel and related oxide phases for emerging technologies, though industrial-scale adoption remains limited compared to established oxide materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |