Cu3Ge4O12 is a ternary oxide semiconductor compound belonging to the family of mixed-metal germanates with potential applications in electronic and photonic devices. This material is primarily of research interest rather than a widely commercialized product, investigated for its semiconducting properties and structural characteristics that may enable novel functionality in optoelectronic or thermal management contexts. Engineers consider this compound when exploring alternatives to conventional semiconductors where the combination of copper, germanium, and oxygen provides unique electronic band structure, thermal stability, or dielectric properties for specialized applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 29,621.5 | ksi | — | ||
Shear Modulus(G) | 14,996.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.108 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.259 | eV/atom | — |