Cu3 Ge4 O12

semiconductor

· Cu3 Ge4 O12

Cu3Ge4O12 is a ternary oxide semiconductor compound belonging to the family of mixed-metal germanates with potential applications in electronic and photonic devices. This material is primarily of research interest rather than a widely commercialized product, investigated for its semiconducting properties and structural characteristics that may enable novel functionality in optoelectronic or thermal management contexts. Engineers consider this compound when exploring alternatives to conventional semiconductors where the combination of copper, germanium, and oxygen provides unique electronic band structure, thermal stability, or dielectric properties for specialized applications.

experimental semiconductorsoptoelectronic researchthermal management materialsadvanced ceramicsoxide electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	204.2	GPa	—
Shear Modulus(G)	103.4	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.108	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.259	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cu3 Ge4 O12

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control