Cu2SiS3 is a ternary copper silicide sulfide compound that belongs to the family of mixed-metal chalcogenides. This is a research-phase material rather than an established engineering material; it is primarily investigated for its semiconductor and photovoltaic properties, particularly in thin-film solar cell absorber layers and light-harvesting applications where the combination of copper, silicon, and sulfur offers potential band-gap engineering and cost advantages over conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1388 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -103.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1284 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3769 | eV/atom | — |