Cu2SiS3 is a ternary copper silicide sulfide compound that belongs to the family of mixed-metal chalcogenides. This is a research-phase material rather than an established engineering material; it is primarily investigated for its semiconductor and photovoltaic properties, particularly in thin-film solar cell absorber layers and light-harvesting applications where the combination of copper, silicon, and sulfur offers potential band-gap engineering and cost advantages over conventional alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.841 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9450 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1284 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3769 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data