Cu2NiSnSe4 is a quaternary semiconductor compound belonging to the chalcogenide family, combining copper, nickel, tin, and selenium in a fixed stoichiometric ratio. This material is primarily of research interest for photovoltaic and thermoelectric applications, where its direct bandgap and tunable electronic properties make it a candidate for next-generation thin-film solar cells and energy conversion devices. As a relatively unexplored compound compared to established alternatives like CdTe or CIGS solar absorbers, it represents an opportunity to engineer improved efficiency, stability, or cost profiles through compositional control of the nickel and tin ratios.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.716 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.05750 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2516 | eV/atom | — |