Cu₂GeS₃ is a quaternary semiconductor compound combining copper, germanium, and sulfur, belonging to the family of chalcogenide semiconductors with potential for optoelectronic and photovoltaic applications. This material exists primarily in research and development contexts rather than as an established commercial product, where it is being investigated for thin-film solar cells, photodetectors, and other light-energy conversion devices due to its tunable bandgap and earth-abundant constituent elements. Interest in Cu₂GeS₃ stems from its potential to replace rare or toxic semiconductor materials while offering favorable optical and electronic properties for next-generation energy harvesting systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.333 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.5300 | eV | Measured | ||
| ↳ | 0.1300 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 19.77 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00115 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00199 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -128.8 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 268.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00330 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3796 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data