Cu₂ZnGeSe₄ is a quaternary semiconductor compound belonging to the chalcogenide family, combining copper, zinc, germanium, and selenium in a stoichiometric ratio. This material is primarily of research and development interest for photovoltaic and optoelectronic applications, where its direct bandgap and favorable absorption characteristics position it as a potential absorber layer for thin-film solar cells and light-emitting devices. Engineers would consider this compound as an alternative to established absorbers like CIGS (copper indium gallium selenide) when seeking lower-toxicity, earth-abundant elemental substitutes or when tuning electronic properties for specific wavelength ranges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 60.86 | GPa | — | ||
Shear Modulus(G) | 27.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03460 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3550 | eV/atom | — |