Cu₂SnSe₄ is a quaternary semiconductor compound belonging to the chalcogenide family, specifically a diamond-like structure with potential for optoelectronic and thermoelectric applications. This material is primarily investigated in research settings for photovoltaic devices, infrared detectors, and thermoelectric energy conversion, where its direct bandgap and tunable electronic properties offer advantages over simpler binary or ternary semiconductors. Engineers consider Cu₂SnSe₄ when designing cost-effective alternatives to cadmium-based or lead-based semiconductors, as it utilizes abundant elements and demonstrates promising performance in thin-film device architectures.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,534.1 | ksi | — | ||
Shear Modulus(G) | 1,774.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00350 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1920 | eV/atom | — |