Cu₂O₄F₂ is an experimental copper oxide fluoride semiconductor compound that combines copper oxidation states with fluorine doping to modulate electronic properties. This material family is primarily of research interest for photocatalytic applications, optoelectronic devices, and energy storage systems where fluorine incorporation can enhance charge carrier mobility and band gap engineering. While not yet established in mainstream production, copper oxide fluorides represent an emerging platform for developing cost-effective, earth-abundant alternatives to traditional semiconductors in applications requiring tunable electronic or photonic response.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 93.33 | GPa | — | ||
Shear Modulus(G) | 32.04 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00410 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7720 | eV/atom | — |