Cu2 In2 Te4
semiconductorCu₂In₂Te₄ is a quaternary semiconductor compound belonging to the I-III-VI family of chalcogenides, characterized by a layered crystal structure and direct bandgap properties. This material is primarily investigated in research contexts for photovoltaic and optoelectronic applications, where its tunable bandgap and potential for high absorption coefficients make it a candidate for next-generation solar cells and infrared detectors. Engineers consider Cu₂In₂Te₄ and related ternary/quaternary telluride semiconductors as alternatives to conventional thin-film absorbers (CdTe, Cu(In,Ga)Se₂) when seeking improved stability, non-toxic compositions, or application-specific optical properties in early-stage device development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |