Cu₂InHo is an intermetallic semiconductor compound combining copper, indium, and holmium—a rare-earth doped ternary system. This material is primarily a research-phase compound investigated for potential applications in thermoelectric energy conversion and magnetic semiconductor devices, where the holmium dopant introduces magnetic functionality absent in binary Cu-In semiconductors. Engineers considering this material should recognize it as an experimental system rather than an established industrial compound; its development targets next-generation energy harvesting and magnetoelectronic applications where conventional semiconductors or thermoelectrics fall short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13,111.4 | ksi | — | ||
Shear Modulus(G) | 5,917.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06110 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3580 | eV/atom | — |