Cu2 In1 Ho1

semiconductor

· Cu2 In1 Ho1

Cu₂InHo is an intermetallic semiconductor compound combining copper, indium, and holmium—a rare-earth doped ternary system. This material is primarily a research-phase compound investigated for potential applications in thermoelectric energy conversion and magnetic semiconductor devices, where the holmium dopant introduces magnetic functionality absent in binary Cu-In semiconductors. Engineers considering this material should recognize it as an experimental system rather than an established industrial compound; its development targets next-generation energy harvesting and magnetoelectronic applications where conventional semiconductors or thermoelectrics fall short.

thermoelectric energy harvestingmagnetic semiconductors (research)rare-earth doped compoundshigh-performance electronics (exploratory)materials research prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	90.40	GPa	—
Shear Modulus(G)	40.80	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.06110	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3580	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cu2 In1 Ho1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control