Cu₂GeSe₄Hg is a quaternary semiconductor compound combining copper, germanium, selenium, and mercury in a mixed-metal chalcogenide structure. This is a research-phase material studied primarily for its potential in thermoelectric and optoelectronic applications, where the combination of elements is designed to manipulate band structure and phonon behavior. The material family occupies a niche intersection of II-VI and I-III-VI₂ semiconductors, with potential relevance to energy conversion and infrared sensing where alternatives like CdTe or lead-based materials face regulatory or performance constraints.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,320.4 | ksi | — | ||
Shear Modulus(G) | 3,257.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3403 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2200 | eV/atom | — |