Cu₂GeS₄ is a quaternary semiconductor compound belonging to the chalcogenide family, composed of copper, germanium, and sulfur in a 2:1:4 stoichiometric ratio. This material is primarily of research and developmental interest for photovoltaic and optoelectronic applications, where its direct bandgap and tunable electronic properties position it as a candidate for thin-film solar cells and light-emitting devices. Compared to conventional semiconductors like silicon or CdTe, Cu₂GeS₄ offers potential advantages in cost and earth-abundance, though it remains largely in the exploratory phase rather than established commercial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00300 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2690 | eV/atom | — |