Cu₂C₂S₂N₂ is an experimental mixed-anion semiconductor compound combining copper with carbon, sulfur, and nitrogen in a single crystal lattice. This material belongs to an emerging class of quaternary semiconductors designed to enable bandgap engineering and multi-functional properties not achievable in binary or ternary systems. Research into such compounds targets next-generation photovoltaics, optoelectronics, and catalytic applications where tunable electronic structure and heteroatom doping can improve light absorption, charge transport, or surface reactivity compared to conventional III–V or II–VI semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.071 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1320 | eV/atom | — |