Cu₂Bi₂Se₂O₂ is a mixed-valence copper bismuth selenide oxide semiconductor, representing an experimental multinary compound combining p-block elements (Bi, Se) with transition metal (Cu) in an oxide framework. This material family is primarily investigated in research contexts for thermoelectric and optoelectronic applications, where layered or mixed-anion structures can enable tunable band gaps, low thermal conductivity, and enhanced charge carrier mobility compared to binary semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 82.29 | GPa | — | ||
Shear Modulus(G) | 32.61 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03740 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7350 | eV/atom | — |