Cu₂Bi₂O₄ is a ternary oxide semiconductor compound combining copper and bismuth in an oxidized ceramic matrix. This material is primarily investigated in research contexts for photocatalytic and optoelectronic applications, where its narrow bandgap and mixed-valence metal composition offer potential advantages in visible-light-driven processes and electronic devices. While not yet established in high-volume industrial production, Cu₂Bi₂O₄ belongs to a family of bismuth-based semiconductors that have attracted attention as alternatives to conventional materials in photocatalysis, thin-film devices, and environmental remediation applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 65.97 range 55.23–76.70median of 2 measurements | GPa | — | ||
Shear Modulus(G) | 25.71 range 24.96–26.46median of 2 measurements | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8958 range 0.7908–1.001median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.018 range -1.037–-0.9980median of 2 measurements | eV/atom | — |