Cu₂As₄ is a copper arsenide semiconductor compound belonging to the III-V semiconductor family, notable for its potential in optoelectronic and photovoltaic applications. This material remains primarily in research and development phases, being investigated for direct bandgap semiconductor properties that could enable efficient light emission and detection across infrared wavelengths. Engineers consider copper arsenides for specialized applications where conventional semiconductors (Si, GaAs) face performance limitations, though commercial adoption is limited due to toxicity concerns with arsenic and competing alternatives with superior reliability.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,146 | ksi | — | ||
Shear Modulus(G) | 3,824.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00180 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.08700 | eV/atom | — |