Cu2As2 is a binary compound semiconductor composed of copper and arsenic, belonging to the family of II-V semiconductors with a layered or complex crystal structure. This material is primarily of research and developmental interest rather than established in high-volume industrial production, with potential applications in optoelectronics and thermoelectric devices where its band gap and carrier transport properties could offer advantages over more conventional semiconductors. Engineers considering Cu2As2 would typically be exploring advanced device concepts in photovoltaics, infrared detection, or solid-state cooling rather than selecting it for conventional semiconductor manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,540.9 | ksi | — | ||
Shear Modulus(G) | 3,967.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000800 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.06600 | eV/atom | — |