Cu₂As₂Pb₂O₈ is an oxide semiconductor compound containing copper, arsenic, lead, and oxygen—a quaternary mixed-metal oxide belonging to the family of complex oxide semiconductors. This is primarily a research-phase material studied for its electronic and structural properties rather than an established industrial standard; compounds in this family are of interest for photovoltaic applications, solid-state electronics, and materials with tailored band gap characteristics. The presence of lead and arsenic requires careful handling and environmental consideration, making practical deployment context-dependent; researchers are drawn to such mixed-metal oxides for their potential to exhibit novel electronic properties and phase stability not found in binary or simpler ternary systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 41.68 | GPa | — | ||
Shear Modulus(G) | 21.91 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.973 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.191 | eV/atom | — |