CuSiBr is an experimental compound combining copper, silicon, and bromine elements, likely of interest in semiconductor and optoelectronic research. This ternary composition sits at the intersection of copper-halide semiconductors and silicon-based electronics, making it a candidate material for exploring new band structure properties or heterostructure device architectures. While not yet established in mainstream industrial production, materials in this family are investigated for potential applications requiring copper's conductive properties combined with halide-based photonic or electronic functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00870 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6410 | eV/atom | — |