Cu₁N₁ (copper nitride) is a semiconductor compound combining copper and nitrogen in a 1:1 stoichiometric ratio. This material exists primarily in research and development contexts as an alternative to traditional semiconductors and copper-based compounds, with potential applications in optoelectronics and photocatalysis due to its narrow bandgap and mixed-valence properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 198.6 | GPa | — | ||
Shear Modulus(G) | 33.50 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00390 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.307 | eV/atom | — |