Cu₁In₁Te₄Ta₂ is an experimental quaternary semiconductor compound combining copper, indium, tellurium, and tantalum. This material belongs to the family of complex chalcogenide semiconductors and is primarily of research interest rather than established industrial production; it may be investigated for photovoltaic, thermoelectric, or optoelectronic applications where the layered chalcogenide structure and mixed-metal composition could enable tunable bandgap or enhanced charge transport properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,637.2 | ksi | — | ||
Shear Modulus(G) | -1,189.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00380 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3370 | eV/atom | — |