Cu1Hf2 is an intermetallic compound combining copper and hafnium in a 1:2 stoichiometric ratio, classified as a semiconductor material. This compound represents an experimental or research-phase material within the Cu-Hf binary system, investigated for its electronic properties and potential structural applications where hafnium's refractory characteristics combine with copper's thermal and electrical conductivity. The material family is notable for investigating unconventional semiconductor phases in transition metal systems, though industrial production and widespread adoption remain limited compared to established semiconductor alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17,996 | ksi | — | ||
Shear Modulus(G) | 8,430.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00120 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1790 | eV/atom | — |