Cu1Hf1Hg2 is an intermetallic semiconductor compound combining copper, hafnium, and mercury. This is a research-phase material rather than an established commercial product; intermetallic semiconductors in this family are investigated for potential applications in high-temperature electronics and thermoelectric devices where conventional silicon-based semiconductors become unreliable. The inclusion of mercury and hafnium suggests exploration of bandgap engineering and thermal stability for niche applications in extreme environment sensing or specialized optoelectronics, though practical deployment remains limited and material synthesis and reliability require further development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,857.4 | ksi | — | ||
Shear Modulus(G) | 2,953 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03140 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1470 | eV/atom | — |