Cu₁H₁O₂ is a copper-based semiconductor compound combining copper metal with hydrogen and oxygen constituents. This material family represents an emerging research area in oxide semiconductors and mixed-valence copper compounds, with potential applications in optoelectronic devices, catalysis, and energy storage systems. While not yet widely commercialized, copper hydroxide and related Cu-H-O phases are investigated for their tunable electronic properties and role as precursors to functional copper oxide semiconductors used in photocatalysis and thin-film electronics.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,464.4 | ksi | — | ||
Shear Modulus(G) | 5,808.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06440 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6860 | eV/atom | — |