Cu1 Bi1 W2 O8

semiconductor

· Cu1 Bi1 W2 O8

Cu1Bi1W2O8 is a mixed-metal oxide semiconductor compound containing copper, bismuth, and tungsten. This material belongs to the family of complex oxide semiconductors and is primarily of research and development interest rather than established industrial production. The compound is being investigated for potential applications in photocatalysis, optoelectronics, and energy conversion due to the electronic properties imparted by its multi-metal composition; bismuth and tungsten oxides are known photocatalytic components, and their combination with copper offers opportunities for tuning bandgap and charge-carrier behavior compared to single-metal oxide alternatives.

Photocatalytic materials (research)Semiconductor optoelectronics (experimental)Environmental remediation (water treatment)Energy conversion devices (development phase)Advanced ceramic coatings (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	14,315.2	ksi	—
Shear Modulus(G)	7,034.3	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.203	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.976	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cu1 Bi1 W2 O8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control