Cu0.2Ga1.8S2.8

semiconductor

· Cu0.2Ga1.8S2.8

Cu0.2Ga1.8S2.8 is a copper-gallium sulfide compound semiconductor, a ternary chalcogenide material that belongs to the family of I-III-VI semiconductors. This is a research-phase material rather than a commercial product, studied for its potential to serve as a light-absorbing layer or buffer layer in thin-film photovoltaic devices and optoelectronic applications. The copper doping and gallium-sulfur stoichiometry are designed to optimize bandgap and electronic properties for solar energy conversion or other light-based applications, though its specific performance advantages over established alternatives like CdTe, CIGS, or perovskites require evaluation against intended device architecture and environmental operating conditions.

thin-film photovoltaicssolar cell absorber layersoptoelectronic deviceschalcogenide semiconductorsbandgap engineeringresearch/development phase

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.700	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cu0.2Ga1.8S2.8

Electrical Properties

Regulatory Screening

Environmental

Export Control