Cu0.05Ga1.95Se2.95 is a copper-doped gallium selenide compound semiconductor, a variant within the III-VI semiconductor family with partial copper substitution on the gallium sublattice. This is primarily a research material being investigated for its potential to improve optoelectronic and photovoltaic properties compared to undoped gallium selenide, with copper doping used to engineer bandgap and carrier transport characteristics for specialized device applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.960 | eV | — |