CsMnN3 is an experimental perovskite-related semiconductor compound combining cesium, manganese, and nitrogen in a nitride framework. This material belongs to the halide perovskite and metal nitride families under active research for next-generation optoelectronic and energy applications. While not yet commercialized at scale, CsMnN3 and related manganese nitrides are being investigated for photovoltaic devices, light-emitting applications, and spintronics due to their tunable band gaps and potential for efficient charge carrier transport in nitrogen-based frameworks.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3000 | eV | — | ||
Magnetic Moment(μB) | -1.227 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.100 | eV/atom | — |