CsMn4In5Te12

semiconductor

· CsMn4In5Te12

CsMn4In5Te12 is a ternary chalcogenide semiconductor compound combining cesium, manganese, indium, and tellurium elements. This is a research-phase material studied primarily for its potential in thermoelectric energy conversion and solid-state electronic devices, where mixed-metal telluride systems are explored for tunable band gaps and phonon scattering properties that could improve performance over conventional binary semiconductors.

thermoelectric devicessolid-state energy conversionsemiconductor researchinfrared detectorsquantum materials explorationthin-film electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.480	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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CsMn4In5Te12

Electrical Properties

Regulatory Screening

Environmental

Export Control