CsMn4In5Se12 is a quaternary chalcogenide semiconductor compound combining cesium, manganese, indium, and selenium in a fixed stoichiometric ratio. This is a research-phase material being investigated for optoelectronic and photovoltaic applications due to its tunable bandgap and potential for efficient light absorption and charge transport. The material belongs to the broader family of multinary semiconductors designed to overcome limitations of binary and ternary compounds, with potential advantages in solar cells, photodetectors, and solid-state lighting where bandgap engineering and compositional flexibility are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.790 | eV | — |