CsInN3

semiconductor

· CsInN3

CsInN₃ is an experimental wide-bandgap semiconductor compound belonging to the ternary nitride family, combining cesium, indium, and nitrogen in a layered or perovskite-related crystal structure. This material remains primarily in research phase and is being investigated for next-generation optoelectronic and high-energy-density applications where conventional III-V nitrides (GaN, InN) reach performance limits. Its potential relevance lies in enabling deep-UV photonics, high-power electronics, or novel quantum devices, though industrial deployment is not yet established.

wide-bandgap semiconductors researchdeep-UV optoelectronicshigh-power electronics developmentquantum materials explorationphotovoltaic absorberssolid-state lighting (experimental)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3000	eV	—
Magnetic Moment(μB)	0.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.680	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CsInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control