CsInN3
semiconductor· CsInN3
CsInN₃ is an experimental wide-bandgap semiconductor compound belonging to the ternary nitride family, combining cesium, indium, and nitrogen in a layered or perovskite-related crystal structure. This material remains primarily in research phase and is being investigated for next-generation optoelectronic and high-energy-density applications where conventional III-V nitrides (GaN, InN) reach performance limits. Its potential relevance lies in enabling deep-UV photonics, high-power electronics, or novel quantum devices, though industrial deployment is not yet established.
wide-bandgap semiconductors researchdeep-UV optoelectronicshigh-power electronics developmentquantum materials explorationphotovoltaic absorberssolid-state lighting (experimental)
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.