CsGaSn2Se6 is a quaternary chalcogenide semiconductor compound containing cesium, gallium, tin, and selenium. This is an experimental material currently under research investigation, primarily explored for its potential in infrared optics and photovoltaic applications, leveraging the favorable bandgap and optical properties typical of mixed-metal selenide systems. It represents a promising alternative to simpler binary and ternary semiconductors for specialized optoelectronic devices where tunable electronic and photonic properties are advantageous.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.870 | eV | — |