CsGaN3 — Properties & Data | MatWorld

CsGaN3

ceramic

· CsGaN3

CsGaN3 is an experimental cesium gallium nitride ceramic compound belonging to the wide-bandgap semiconductor family. This material is primarily of research interest for next-generation power electronics and UV optoelectronic devices, where its potential wide bandgap and high-temperature stability could offer advantages over conventional GaN in extreme operating conditions; however, it remains in early-stage development with limited commercial production.

high-temperature power electronics (research)wide-bandgap semiconductorsUV light-emitting devices (theoretical)extreme environment electronicsadvanced ceramics researchnext-generation semiconductor materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	5.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.380	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CsGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental