CsGaN3 is an experimental cesium gallium nitride ceramic compound belonging to the wide-bandgap semiconductor family. This material is primarily of research interest for next-generation power electronics and UV optoelectronic devices, where its potential wide bandgap and high-temperature stability could offer advantages over conventional GaN in extreme operating conditions; however, it remains in early-stage development with limited commercial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 5.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.380 | eV/atom | — |