Cs5BiP4Se12 is a quaternary semiconductor compound combining cesium, bismuth, phosphorus, and selenium—a member of the complex chalcogenide family designed for optoelectronic and photovoltaic applications. This is primarily a research material investigated for its potential in infrared detection, mid-infrared nonlinear optics, and next-generation solar cells, offering tailored bandgap and crystal structure advantages over simpler binary semiconductors. Its layered or framework structure may enable tunable electronic properties, making it relevant to materials scientists exploring alternatives to conventional II-VI or lead-based semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.850 | eV | — |