Cs4BiAs3Se7

semiconductor

· Cs4BiAs3Se7

Cs₄BiAs₃Se₇ is a complex quaternary chalcogenide semiconductor composed of cesium, bismuth, arsenic, and selenium. This is a research-phase compound studied primarily for its potential in infrared optics and nonlinear optical applications, where its wide bandgap and layered crystal structure offer advantages for mid-to-far infrared detection and frequency conversion. As an emerging material in the chalcogenide family, it represents experimental work aimed at replacing more toxic or less efficient alternatives in specialized photonic devices, though it remains largely confined to laboratory development rather than established industrial production.

infrared optics (research)nonlinear optical devicesmid-infrared detectorsphotonic materials developmentchalcogenide semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.020	eV	—

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Regulatory Screening

Environmental

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Cs4BiAs3Se7

Electrical Properties

Regulatory Screening

Environmental

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